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GaAs Wafer

Gallium Arsenide Wafer

Chemical Formula: GaAs, Molecular Weight 144.64

Properties:

Cubic crystal, dark gray with metallic luster, melting point 1238°C, hardness 4.5, thermal expansion coefficient 5.9x10⁻⁶, thermal conductivity 0.52, density 5.31

Applications:

GaAs has various applications, mainly LED (Light Emission Diode), GaAs IC, FET (Field Effect Transistor), and is also used in LD Laser, Hall Sensor devices, and its application in solar cell development is expected.

Manufacturing Method:

  • HB Method (Horizontal Bridgeman Process)
  • LEC Method (Liquid Encapsulation Czochralski Process)

General Specification

Parameter Unit VGF/LE-VB Grown
2 inch		 VGF/LE-VB Grown
3 inch		 LEC Grown
3 inch		 LEC Grown
4 inch		 LEC Grown
6 inch
Conduction Type/Dopant - SC, SI /Si, Zn, Undoped SC, SI /Si, Zn, Undoped SI / Undoped SI / Undoped SI / Undoped
Diameter inch 2 3 3 4 6
Diameter mm 50.8 ± 0.1 76.2 ± 0.1 76.2 ± 0.1 100 ± 0.1 150 ± 0.1
Orientation - (100) ± 0.3°
Off Orientation A ° 2° ± 0.3°
Off Orientation B ° 15° ± 0.3° 15° ± 0.3° Upon Request
Thickness* μm 350 ± 25 625 ± 25 625 ± 25 625 ± 25 675 ± 25
TTV* μm ≤ 5 ≤ 5 ≤ 5 ≤ 6 ≤ 7
TIR* μm ≤ 4 ≤ 4 ≤ 4 ≤ 5 ≤ 6
Warp* μm ≤ 10 ≤ 15 ≤ 7 ≤ 10 ≤ 15
Resistivity Ω·cm 0.001 ~ 0.1 (Si Doped) 0.001 ~ 0.1 (Si Doped) > 1E7 > 1E7 > 1E7
Hall Mobility cm²/v·sec 1,000 ~ 3,000 (Si Doped) 1,000 ~ 3,000 (Si Doped) > 5,000 > 6,000 > 7,000
EPD (Etch Pit Density) cm⁻² < 500 < 1,000 < 8E4 < 1E5 < 1.5E5

Quote Request

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Wafer Specifications

μm
cm²/v·sec

Contact Information