Product Detail Specifications
| ITEMS | SPEC | TEST METHOD |
|---|---|---|
| Growth Technique | CZ | - |
| Diameter | 200.0±0.5mm | - |
| Type/Dopant | P/Boron, N/Phosphorus, N/Antimony | - |
| Resistivity | 1~30Ωcm | - |
| Crystal Orientation | (100), (111), (110) | - |
| Orientation Flat | SEMI-STD | - |
| Thickness | 725±25μm | - |
| Warp | < 30.0μm | - |
| Global TTV | < 30μm | - |
| Global TIR | < 5.0μm | - |
Please fill out the form below with detailed information about your Si Wafer Service requirements. Our wafer sales team will review your request and respond promptly via the contact information provided.